High-power 1.3-/spl mu/m InGaAsP/InP lasers and amplifiers with tapered gain regions

Author

Donnelly, J.P. ; Walpole, J.N. ; Betts, G.E. ; Groves, S.H. ; Woodhouse, J.D. ; Missaggia, L.J. ; O´Donnell, F.J. ; Bailey, R.J.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

315

Lastpage

316

Abstract

Summary form only given. We have previously reported tapered lasers at 1.3 /spl mu/m with cw output powers of 0.5 W of which nearly 80% was in the central lobe of a nearly diffraction-limited far field. Here we report laser and amplifier results on devices fabricated using improved processing techniques and a new device design. The new device incorporates a ridge waveguide section with the tapered gain region as illustrated and is similar to that reported earlier for 980-nm tapered lasers and amplifiers. The material used for these devices is a stepped separate-confinement heterostructure with three compressively strained InGaAsP-InP quantum wells.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; /spl mu/m InGaAsP/InP lasers; 0.5 W; 1.3 mum; 980 nm; InGaAsP-InP; central lobe; compressively strained InGaAsP-InP quantum wells; cw output powers; device design; improved processing techniques; laser amplifiers; nearly diffraction-limited far field; nm tapered lasers; ridge waveguide section; stepped separate-confinement heterostructure; tapered gain region; tapered gain regions; tapered lasers; Diffraction; High power amplifiers; Indium phosphide; Optical design; Optical materials; Power amplifiers; Power generation; Power lasers; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864728