• DocumentCode
    3549956
  • Title

    A 90-GHz voltage-controlled oscillator with a 2.2-GHz tuning range in a 130-nm CMOS technology

  • Author

    Cao, Changhua ; O, Kenneth K.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • fYear
    2005
  • fDate
    16-18 June 2005
  • Firstpage
    242
  • Lastpage
    243
  • Abstract
    A 90-GHz LC-resonator based voltage-controlled oscillator (VCO) is fabricated in a 130-nm foundry CMOS process. The core transistor structure has been optimized to reduce parasitic capacitances. An accumulation mode MOS varactor has been optimized to achieve Q of ∼7 at 90 GHz or ∼600 at 1 GHz. The VCO is tuned by changing the bias voltage of current source transistor, which modifies the DC bias for core transistors, and that for the varactors to achieve a tuning range of 2.2 GHz. The VCO core consumes 5 to 10.5-mA current from a 1.5-V supply. The phase noise at 10-MHz offset from carrier varies between -104 to -106 dBc/Hz over the tuning range.
  • Keywords
    CMOS integrated circuits; MOS capacitors; integrated circuit design; millimetre wave oscillators; varactors; voltage-controlled oscillators; 1 GHz; 1.5 V; 10 MHz; 130 nm; 2.2 GHz; 5 to 10.5 mA; 90 GHz; CMOS process; CMOS technology; LC-resonator; MOS varactor; current source transistor; parasitic capacitances; transistor structure; voltage-controlled oscillator; CMOS technology; Integrated circuit technology; Microwave technology; Parasitic capacitance; Phase noise; Power generation; Tuning; Varactors; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits, 2005. Digest of Technical Papers. 2005 Symposium on
  • Print_ISBN
    4-900784-01-X
  • Type

    conf

  • DOI
    10.1109/VLSIC.2005.1469376
  • Filename
    1469376