Maximum efficiency tuning of microwave amplifiers

Author

Hall, L.C. ; Trew, R.J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

123

Abstract

Maximum-efficiency tuning conditions for a microwave power amplifier are determined by a statistical impedance matching method. A physics-based MESFET simulator is used to predict optimum device performance. The sensitivity of efficiency to variations in source harmonic impedance matching is described and shown to be significant. Simulations indicate that proper harmonic tuning can achieve power-added efficiencies of approximately=80% at 5 GHz.<>

Keywords

Schottky gate field effect transistors; circuit analysis computing; microwave amplifiers; power amplifiers; solid-state microwave circuits; tuning; 5 GHz; 80 percent; harmonic tuning; maximum efficiency tuning; microwave power amplifier; optimum device performance; physics-based MESFET simulator; power-added efficiencies; sensitivity of efficiency; source harmonic impedance matching; statistical impedance matching method; Circuit optimization; Circuit simulation; High power amplifiers; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Power system harmonics; Tuning; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146942

Filename

146942