Title :
Maximum efficiency tuning of microwave amplifiers
Author :
Hall, L.C. ; Trew, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Maximum-efficiency tuning conditions for a microwave power amplifier are determined by a statistical impedance matching method. A physics-based MESFET simulator is used to predict optimum device performance. The sensitivity of efficiency to variations in source harmonic impedance matching is described and shown to be significant. Simulations indicate that proper harmonic tuning can achieve power-added efficiencies of approximately=80% at 5 GHz.<>
Keywords :
Schottky gate field effect transistors; circuit analysis computing; microwave amplifiers; power amplifiers; solid-state microwave circuits; tuning; 5 GHz; 80 percent; harmonic tuning; maximum efficiency tuning; microwave power amplifier; optimum device performance; physics-based MESFET simulator; power-added efficiencies; sensitivity of efficiency; source harmonic impedance matching; statistical impedance matching method; Circuit optimization; Circuit simulation; High power amplifiers; Impedance; Microwave amplifiers; Power amplifiers; Power generation; Power system harmonics; Tuning; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146942
