Submicron gate indium gallium arsenide microwave power transistors

Author

Johnson, G.A. ; Kapoor, V.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

131

Abstract

Depletion-mode InGaAs microwave power MISFETS with 0.7- mu m gate lengths and 0.2-mm gate widths have been fabricated using an epitaxial process. The devices employed a plasma-deposited silicon dioxide gate insulator. The RF power performance at 18 GHz is presented. An output power density of 0.92 W/mm with a corresponding power gain and power-added efficiency of 3.2 dB and 29%, respectively, was obtained. This is the highest output power density obtained for the InGaAs-based transistor on InP at K-band.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 0.2 mm; 0.7 micron; 18 GHz; 29 percent; 3.2 dB; InGaAs; InGaAs-InP; InP; K-band; MISFETS; RF power performance; SHF; SiO/sub 2/ gate insulator; depletion mode; epitaxial process; gate lengths; gate widths; microwave power transistors; output power density; power gain; power-added efficiency; semiconductors; submicron gate; Indium gallium arsenide; Insulation; MISFETs; Microwave devices; Plasma density; Plasma devices; Power generation; Power transistors; Radio frequency; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146944

Filename

146944