Modeling and performance of a sub-nanosecond high isolation DC-18 GHz monolithic SPST with driver

Author

Mallet-Guy, A. ; Ariel, D. ; Lacombe, J.L. ; Levy, D. ; Marsot, P. ; Thibout, T.

Author_Institution

Thomson-CSF Branche Equipement Aeronaut., Malakoff, France

fYear

1991

fDate

10-14 July 1991

Firstpage

193

Abstract

The design, computed performance using linear and nonlinear modeling, and experimental results of a DC 18-GHz high-isolation ultrafast monolithic SPST (single-pole single-throw) switch with driver are presented. A nonlinear simulation of the SPST and of the driver was carried out in order to predict the switching time of the overall circuit. The monolithic SPST design uses GaAs FETs and the driver uses GaAs devices in order to achieve a very short switching time. Insertion loss of less than 2.4 dB, a typical isolation of 50 dB, and a switching time of less than 1 ns, driver included, were obtained. The validity of the nonlinear models used was demonstrated by the good agreement obtained between the simulated and the measured performance.<>

Keywords

III-V semiconductors; MMIC; driver circuits; field effect integrated circuits; gallium arsenide; switching circuits; 0 to 18 GHz; FETs; GaAs; driver; insertion loss; isolation; linear modeling; monolithic SPST; nonlinear modeling; switching time; Circuit simulation; Computational modeling; Driver circuits; FETs; Gallium arsenide; High performance computing; Insertion loss; Predictive models; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146960

Filename

146960