Modeling and performance of a sub-nanosecond high isolation DC-18 GHz monolithic SPST with driver

The design, computed performance using linear and nonlinear modeling, and experimental results of a DC 18-GHz high-isolation ultrafast monolithic SPST (single-pole single-throw) switch with driver are presented. A nonlinear simulation of the SPST and of the driver was carried out in order to predict the switching time of the overall circuit. The monolithic SPST design uses GaAs FETs and the driver uses GaAs devices in order to achieve a very short switching time. Insertion loss of less than 2.4 dB, a typical isolation of 50 dB, and a switching time of less than 1 ns, driver included, were obtained. The validity of the nonlinear models used was demonstrated by the good agreement obtained between the simulated and the measured performance.<>