New complex-coupled 1.55-/spl mu/m DFB laser with a current blocking grating

Author

Wang, C.Y. ; Lin, Weisi ; Liao, H.H. ; Su, J.Y. ; Tu, Y.K. ; Ching-Ting Lee

fYear

1996

fDate

2-7 June 1996

Firstpage

335

Abstract

Summary form only given. The advantages of using the complex coupled distributed feedback (DFB) laser structure are mainly its high single-mode yield and good selectivity, among others. The lasers described here were grown by MOCVD with a multiple quantum well (MQW) active region consisting of six compressively strained InGaAsP quantum wells. After MOCVD regrowth, both 2 /spl mu/m-wide self-aligned ridge waveguide (RWG) and 1.3-/spl mu/m-wide buried ridge structures (BRS) lasers were fabricated.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; laser transitions; optical couplers; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; /spl mu/m DFB laser; 1.3 mum; 1.55 mum; 2 mum; DFB laser structure; InGaAsP; MOCVD; MOCVD regrowth; MQW active region; buried ridge structure; complex coupled distributed feedback laser structure; complex-coupled; compressively strained InGaAsP quantum wells; current blocking grating; good selectivity; high single-mode yield; multiple quantum well; optical fabrication; self-aligned ridge waveguide; Bandwidth; Distributed feedback devices; Gratings; Laser feedback; Laser modes; MOCVD; Power generation; Power lasers; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864755