Statistical interpolation of FET data base measurements

Author

Campbell, L. ; Purviance, J. ; Potratz, C.

fYear

1991

fDate

10-14 July 1991

Firstpage

201

Abstract

Research into valid and compact statistical FET models is described. A statistical interpolation technique that extends the truth model proposed by J. Purviance et al. (1990) is presented. The truth model simply uses samples from a FET measurement database when performing statistical analysis and design of circuits. The statistical interpolation technique presented multiplies the number of points within a statistical database by interpolating among the measurements in a statistically valid manner. It lends itself easily to software implementation and gives results that are better than those obtained using other available simulation models. The statistical interpolation technique has been developed and validated using 179 GaAs FETs.<>

Keywords

field effect transistors; interpolation; semiconductor device models; FET data base measurements; GaAs; simulation models; software implementation; statistical FET models; statistical interpolation technique; truth model; Circuit simulation; Circuit synthesis; FETs; Frequency measurement; Interpolation; Kernel; Performance evaluation; Probability density function; Scattering parameters; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146962

Filename

146962