DocumentCode
3550293
Title
A physically based large signal HBT model with self heating and transit time effects
Author
Grossman, P.C.
Author_Institution
TRW Electron. Syst. Group, Redondo Beach, CA, USA
fYear
1991
fDate
10-14 July 1991
Firstpage
233
Abstract
A physically based, time-dependent, large-signal HBT (heterojunction bipolar transistor) model is presented. It accounts for the time dependence of base, collector, and emitter charging, and it includes self-heating effects. The model tracks device performance over eight decades of current and can be used as the basis of SPICE model approximations. A hypothesis on the divergence of high-frequency large-signal SPICE simulations from measured data is presented. A new empirical equation for base-collector capacitance is included.<>
Keywords
circuit CAD; heterojunction bipolar transistors; semiconductor device models; SPICE model approximations; base charging; base-collector capacitance; collector charging; emitter charging; large signal HBT model; self heating; transit time effects; Capacitance; Equations; Frequency; Heterojunction bipolar transistors; Predictive models; SPICE; Space charge; Space heating; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-87942-591-1
Type
conf
DOI
10.1109/MWSYM.1991.146970
Filename
146970
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