Monolithic ultra-broadband transimpedance amplifiers using AlGaAs/GaAs HBTS

Author

Nagano, N. ; Suzaki, T. ; Okamoto, A. ; Honjo, K.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1991

fDate

10-14 July 1991

Firstpage

255

Abstract

Monolithic ultra-broadband transimpedance amplifiers have been developed using AlGaAs/GaAs HBTs (heterojunction bipolar transistors). The amplifiers have exhibited DC to 13.4-GHz bandwidth, with an 18.1-dB gain and a 49.8-dB Omega transimpedance. The standard deviations in gain and 3-dB roll-off bandwidth over 2-in wafers were as small as 0.42 dB and 0.47 GHz, respectively. These results have been brought about by an optimized circuit design that takes into account large signal operation and an affordable HBT fabrication process using a self-aligned method. Excellent 10-GB/s NRZ pulse response has confirmed that the amplifiers are adapted to 10-Gb/s optical transmission systems.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; microwave amplifiers; wideband amplifiers; 0 to 13.4 GHz; 10 Gbit/s; 18.1 dB; AlGaAs-GaAs; HBTS; NRZ pulse response; large signal operation; optical transmission systems; optimized circuit design; roll-off bandwidth; self-aligned method; ultra-broadband transimpedance amplifiers; Bandwidth; Circuit synthesis; Design optimization; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical device fabrication; Optical signal processing; Pulse amplifiers; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146976

Filename

146976