A HEMT harmonic oscillator stabilized by an X-band dielectric resonator

Author

Tupynamba, R. ; Camargo, E. ; Correra, F.S.

Author_Institution

Sul America Teleinformatica SA, Sao Paulo, Brazil

fYear

1991

fDate

10-14 July 1991

Firstpage

277

Abstract

A simple design method for harmonic oscillators using HEMT (high-electron-mobility-transistor) devices is presented. The method employs nonlinear analysis to derive the harmonic components of the drain current of a low-frequency transistor model. The resulting harmonic components are used to linearize a high-frequency model and to synthesize the microwave circuit. A second-harmonic oscillator that uses an X-band dielectric resonator and a packaged HEMT device has +6.0 dBm output power at 18 GHz with 6.5% RF/DC efficiency.<>

Keywords

dielectric resonators; equivalent circuits; frequency stability; harmonic oscillators (circuits); high electron mobility transistors; microwave oscillators; nonlinear network analysis; nonlinear network synthesis; solid-state microwave circuits; 18 GHz; 6.5 percent; HEMT harmonic oscillator; SHF; X-band; design method; dielectric resonator; drain current; harmonic components; high-electron-mobility-transistor; high-frequency model; low-frequency transistor model; microwave circuit; nonlinear analysis; packaged HEMT device; second-harmonic oscillator; Circuit synthesis; Design methodology; Dielectric devices; HEMTs; Harmonic analysis; Microwave circuits; Microwave devices; Microwave oscillators; Microwave transistors; Packaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.146982

Filename

146982