Title :
FET DROs at V-band
Author :
Yau, W. ; Watkins, E.T. ; Shih, Y.C.
Author_Institution :
Hughes Aircraft Co., Torrance, CA, USA
Abstract :
MESFET dielectric resonator oscillators (DROs) have been demonstrated at V-band. The first unit operates at 51.2 GHz with an output power as high as 9 dBm. The second unit operates at 65.6 GHz with an output power of 7.6 dBm. DC-to-RF efficiencies were 18% and 14%, respectively. Power variation is less than +or-0.25 dB over a temperature range from 0 to 50 degrees C. The stable output power over temperature makes this FET oscillator more attractive than its diode counterpart. The planar circuit structure employed in this oscillator can be implemented monolithically.<>
Keywords :
Schottky gate field effect transistors; dielectric resonators; equivalent circuits; microwave integrated circuits; microwave oscillators; 0 to 50 degC; 14 percent; 18 percent; 51.2 GHz; 65.6 GHz; EHF; FET DROs; FET oscillator; MESFET; MM-wave type; V-band; dielectric resonator oscillators; millimetre wave operation; planar circuit structure; Coupling circuits; Dielectric constant; Dielectric substrates; FETs; Gallium arsenide; MESFETs; Power amplifiers; Power generation; Radio frequency; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146983
