Title :
Ultralow threshold current lasers
Author :
Dapkus, P.D. ; MacDougal, M.H. ; Gye Mo Yang ; Chao-Kun Lin ; Uppal, Karan
Author_Institution :
Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
Summary form only given. Ultralow threshold current vertical-cavity surface-emitting lasers (VCSELs) will enable practical laser-based smart pixels. Such devices have emerged through the application of monolithically integrated native oxides of AlGaAs as current constriction and mode control layers and as high-contrast Bragg reflectors. In this paper we will demonstrate and analyze the role of the oxide in current constriction and optical field control to predict the scaling of VCSELs to microamp thresholds. In addition, we will demonstrate and analyze the impact of high-contrast AlAs oxide/GaAs Bragg mirrors formed by selective oxidation on the performance of VCSELs and study the tradeoffs in device characteristics that arise from use of electrically insulating mirrors.
Keywords :
laser mirrors; oxidation; semiconductor lasers; surface emitting lasers; AlAs-GaAs; AlGaAs; VCSEL; current constriction; electrically insulating mirror; high-contrast Bragg reflector; mode control; monolithically integrated native oxide; optical field control; selective oxidation; smart pixels; ultralow threshold current laser; vertical-cavity surface-emitting laser; Gallium arsenide; Laser modes; Mirrors; Optical control; Oxidation; Performance analysis; Smart pixels; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
