Title :
C-band GaAs MMIC limiting power amplifier with small insertion phase variation
Author :
Ozaki, J. ; Arai, K. ; Miyauchi, M. ; Watanabe, S. ; Kamihashi, S.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A C-band MMIC (monolithic microwave integrated circuit) limiting power amplifier has been developed by cascading three kinds of MMIC chips (a limiting amplifier, a gain-control amplifier, and power amplifier) in a single package. It provides an output power of 33.2+or-0.2 dBm with an insertion phase variation of less than 2.3 degrees over an input power range from 13.5 dBm to 18.5 dBm. The output power can be controlled between 17.8 dBm and 33.2 dBm with an insertion phase variation of less than 22.5 degrees .<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; power amplifiers; C-band; GaAs; MMIC; cascaded configuration; gain-control amplifier; insertion phase variation; limiting power amplifier; monolithic microwave integrated circuit; Equivalent circuits; FETs; Gain control; Gallium arsenide; MMICs; Microwave amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.146998
