Photocurrents generated by moving optical interference patterns in photoconductive semiconductors in the presence of interband optical excitations

Author

Chen-Chia Wang ; Davidson, Fraser ; Trivedi, Soham

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

366

Lastpage

367

Abstract

Summary form only given. When two monochromatic optical fields interfere inside photoconductive semiconductors containing deep level recombination centers, the spatially inhomogenous optical intensity pattern causes the redistribution of photo-excited free charge carriers, resulting in the formation of an internal space charge electric field. The photoconductive semiconductor used was a Si sample with polished but not Ar-coated surfaces.

Keywords

deep levels; elemental semiconductors; light interference; measurement by laser beam; photoconducting materials; silicon; space charge; Si; Si sample; deep level recombination centers; interband optical excitations; internal space charge electric field; monochromatic optical field interference; moving optical interference patterns; photo-excited free charge carrier redistribution; photoconductive semiconductor; photoconductive semiconductors; photocurrent generation; polished; spatially inhomogenous optical intensity pattern; DC generators; Equations; Frequency; Interference; Optical materials; Optimized production technology; Photoconducting devices; Photoconducting materials; Photoconductivity; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864795