Title :
Photocurrents generated by moving optical interference patterns in photoconductive semiconductors in the presence of interband optical excitations
Author :
Chen-Chia Wang ; Davidson, Fraser ; Trivedi, Soham
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
Summary form only given. When two monochromatic optical fields interfere inside photoconductive semiconductors containing deep level recombination centers, the spatially inhomogenous optical intensity pattern causes the redistribution of photo-excited free charge carriers, resulting in the formation of an internal space charge electric field. The photoconductive semiconductor used was a Si sample with polished but not Ar-coated surfaces.
Keywords :
deep levels; elemental semiconductors; light interference; measurement by laser beam; photoconducting materials; silicon; space charge; Si; Si sample; deep level recombination centers; interband optical excitations; internal space charge electric field; monochromatic optical field interference; moving optical interference patterns; photo-excited free charge carrier redistribution; photoconductive semiconductor; photoconductive semiconductors; photocurrent generation; polished; spatially inhomogenous optical intensity pattern; DC generators; Equations; Frequency; Interference; Optical materials; Optimized production technology; Photoconducting devices; Photoconducting materials; Photoconductivity; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
