Self organized InAs-GaAs quantum dots injection laser structure

Author

Kop´ev, P.S. ; Ledentsov, Nikolay N. ; Ustinov, V.M. ; Kochnev, I.V. ; Bert, N.A. ; Egorov, A.Yu. ; Zhukov, A.E. ; Komin, V.V. ; Kosogov, A.O. ; Krestnikov, I.L. ; Maximov, M.V. ; Ruvimov, S.S. ; Sakharov, A.V. ; Sherniakov, Yu.M. ; Zaitsev, S.V. ; Alfero

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

2-7 June 1996

Firstpage

383

Lastpage

384

Abstract

Summary form only given. MOCVD grown double heterojunction GaAs-AlGaAs quantum dot injection lasers were grown with InGaAs islands introduced in the active region. The photoluminescence (PL) spectrum of the laser structure with etched off contact layer is shown.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; self-adjusting systems; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; GaAs-AlGaAs; GaAs-AlGaAs quantum dot injection lasers; InAs-GaAs; InAs-GaAs self organised quantum dot injection laser structure; InGaAs islands; MOCVD grown; active region; double heterojunction; etched off contact layer; laser structure; photoluminescence spectrum; Current density; Electroluminescence; Gallium arsenide; Photoluminescence; Quantum dot lasers; Temperature dependence; Temperature distribution; Temperature measurement; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864822