High performance MMIC 20 GHz LNA and 44 GHz power amplifier using planar-doped InGaAs HEMTs

Author

Lester, J.A. ; Jones, W.L. ; Chow, P.D.

Author_Institution

TRW Electron. Syst. Group, Redondo Beach, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

433

Abstract

GaAs-based InGaAs pseudomorphic high electron mobility transistors (HEMTs) have demonstrated superior low-noise and high-power capabilities at microwave and millimeter-wave frequencies. The authors present a pair of 3-stage amplifiers fabricated with the same process demonstrating excellent noise and power performance. A K-band fully monolithic LNA (low-noise amplifier) has been demonstrated greater than 33 dB gain over a 4 GHz bandwidth with a noise figure of less than 2 dB over 2 GHz. A Q-band power amplifier has demonstrated an output power of 13.3 dBm at 1 dB compression with 25.3 dB of gain and a saturated output power of 16.1 dBm at 40 GHz. These amplifiers are designed for insertion into future EHF satellite communication ground terminals.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 2 dB; 20 GHz; 25.3 dB; 3-stage amplifiers; 33 dB; 4 GHz; 44 GHz; EHF; HEMTs; InGaAs; K-band; LNA; MMIC; Q-band; bandwidth; gain; high electron mobility transistors; millimeter-wave frequencies; power amplifier; power performance; semiconductors; Electron mobility; Gain; HEMTs; High power amplifiers; Indium gallium arsenide; MMICs; MODFETs; PHEMTs; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147028

Filename

147028