Title :
Multigigahertz monolithic GaAs optoelectronic receivers using 0.2 mu m gate-length MESFETs
Author :
Walden, R.H. ; Hooper, W.W. ; Chou, C.S. ; Ngo, C. ; WongQuen, R. ; Metzger, R.A. ; Williams, F. ; Larson, L.E. ; Blumgold, R.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
Two GaAs optical receiver front-ends are reported. Each consists of an MSM photodetector and a transresistance amplifier that drives a 50 Omega load. One amplifier has a measured analog bandwidth of 6.5 GHz, while the other has one of 4.5 GHz. The transresistance-bandwidth product for both is 2.1 THz- Omega .<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; microwave amplifiers; optical communication equipment; photodetectors; receivers; 0.2 micron; 50 ohm; 6.5 GHz; GaAs; MSM photodetector; OEIC; bandwidth; metal-semiconductor-metal photodetector; optical receiver front-ends; optical receivers; optoelectronic receivers; semiconductors; transresistance amplifier; transresistance-bandwidth product; Bandwidth; FETs; Gallium arsenide; MESFETs; Optical amplifiers; Optical receivers; Optoelectronic devices; Parasitic capacitance; Photodetectors; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147044
