Multigigahertz monolithic GaAs optoelectronic receivers using 0.2 mu m gate-length MESFETs

Author

Walden, R.H. ; Hooper, W.W. ; Chou, C.S. ; Ngo, C. ; WongQuen, R. ; Metzger, R.A. ; Williams, F. ; Larson, L.E. ; Blumgold, R.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

491

Abstract

Two GaAs optical receiver front-ends are reported. Each consists of an MSM photodetector and a transresistance amplifier that drives a 50 Omega load. One amplifier has a measured analog bandwidth of 6.5 GHz, while the other has one of 4.5 GHz. The transresistance-bandwidth product for both is 2.1 THz- Omega .<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; microwave amplifiers; optical communication equipment; photodetectors; receivers; 0.2 micron; 50 ohm; 6.5 GHz; GaAs; MSM photodetector; OEIC; bandwidth; metal-semiconductor-metal photodetector; optical receiver front-ends; optical receivers; optoelectronic receivers; semiconductors; transresistance amplifier; transresistance-bandwidth product; Bandwidth; FETs; Gallium arsenide; MESFETs; Optical amplifiers; Optical receivers; Optoelectronic devices; Parasitic capacitance; Photodetectors; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147044

Filename

147044