Theory and experiment for the HEMTs under optical illumination

Author

Romero, M.A. ; Cunha, A.L.A. ; de Salles, A.A.A.

Author_Institution

CETUC, Rio de Janeiro, Brazil

fYear

1991

fDate

10-14 July 1991

Firstpage

495

Abstract

Theoretical and experimental investigations of the DC and RF performance of depletion mode Al/sub 0.3/Ga/sub 0.7/As/GaAs HEMTs (high electron mobility transistors) under optical illumination are presented. The photoconductive effect which increases the two-dimensional electron gas (2-DEG) channel electron concentration and the photovoltaic effect in the gate junction are considered. The optical tuning of a 2-GHz HEMT oscillator and the optical control of the gain of a 2-6 GHz HEMT amplifier are presented, and potential applications are described.<>

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gain control; gallium arsenide; high electron mobility transistors; integrated optoelectronics; microwave amplifiers; microwave oscillators; tuning; 2 to 6 GHz; Al/sub 0.3/Ga/sub 0.7/As-GaAs; DC performance; HEMTs; RF performance; amplifier; applications; depletion mode transistors; experimental investigations; high electron mobility transistors; optical control; optical illumination; optical tuning; oscillator; photoconductive effect; photovoltaic effect; semiconductors; Electron optics; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical tuning; Photoconductivity; Photovoltaic effects; Radio frequency; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147045

Filename

147045