Title :
A K-band HEMT low noise receive MMIC for phased array applications
Author :
Carandang, R. ; Yonaki, J. ; Jones, W.L. ; Kasody, R.E. ; Lam, W. ; Liu, L.C.T.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
A state-of-the-art InGaAs HEMT (high electron mobility transistor) receive MMIC (microwave monolithic integrated circuit) consisting of a low-noise amplifier and a novel 3-bit phase shifter has been fabricated and evaluated for receive phased-array development at 20 GHz. The low-noise amplifier employs series and shunt feedback to provide high gain and low noise performance while the 3-bit phase shifter utilizes a novel switched-allpass approach to minimize circuit size. The monolithic receive chip has demonstrated noise figures of less than 2.75 dB and gains between 11.8 and 14.1 dB for the 8 phase-shift states across the 20.2-21.2 GHz frequency range.<>
Keywords :
III-V semiconductors; MMIC; antenna phased arrays; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; phase shifters; radio receivers; 11.8 to 14.1 dB; 2.75 dB; 20 to 21.2 GHz; 3 bit; HEMT; InGaAs; K-band; conformal phased arrays; feedback; frequency range; high electron mobility transistor; low noise receive MMIC; low-noise amplifier; microwave monolithic integrated circuit; monolithic receive chip; noise figures; phase shifter; phased array applications; receive phased-array; semiconductors; switched-allpass; HEMTs; Indium gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Monolithic integrated circuits; Performance gain; Phase noise; Phase shifters;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147052
