Title :
Integrated 200 Mbit/s receiver: silicon CMOS transimpedance amplifier with a thin film InGaAs photodetector
Author :
Vendier, Olivier ; Lee, Minhung ; Jokerst, N.M. ; Brooke, M. ; Leavitt, R.P.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Summary form only given. In this paper, we report for the first time, to our knowledge, the operation of a digital CMOS optical receiver integrated with a high-efficiency inverted metal-semiconductor-metal (I-MSM) thin-film, which operates at 200 Mbit/s at a wavelength of 1300 nm.
Keywords :
CMOS integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical design techniques; optical receivers; photodetectors; silicon; thin film devices; 1300 nm; 200 Mbit/s; InGaAs; Mbit/s receiver; Si; digital CMOS optical receiver; high-efficiency inverted metal-semiconductor-metal thin-film; silicon CMOS transimpedance amplifier; thin film InGaAs photodetector; Bit error rate; CMOS analog integrated circuits; CMOS digital integrated circuits; Decoding; Indium gallium arsenide; Optical noise; Optical receivers; Optical transmitters; Semiconductor thin films; Silicon;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
