Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure

Author

Patel, Dinesh ; Menoni, C.S. ; Connors, P. ; Ochiai, M. ; Bernussi, A.A. ; Temkin, H.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

410

Lastpage

411

Abstract

Summary form only given. In this work we report on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-/spl mu/m compressively strained InGaAsP MQW lasers. Carrier leakage was enhanced through band structure changes induced by hydrostatic pressure. Hydrostatic pressure increases the direct band-gap energy in semiconductor materials, at rates that are dependent on the elastic properties of the materials.

Keywords

III-V semiconductors; band structure; conduction bands; gallium arsenide; gallium compounds; hydrostatics; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; InGaAsP; InGaAsP MQW lasers; InGaAsP lasers; band structure changes; carrier leakage; carrier overflow; compressively strained; direct band-gap energy; elastic properties; hydrostatic pressure; output characteristics; semiconductor materials; slope efficiency; threshold current; Laser feedback; Laser modes; Laser stability; Laser transitions; Optical control; Output feedback; Power generation; Power lasers; Quantum well lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864854