Title :
Enhancement and deterioration of the output characteristics of compressively strained InGaAsP lasers with hydrostatic pressure
Author :
Patel, Dinesh ; Menoni, C.S. ; Connors, P. ; Ochiai, M. ; Bernussi, A.A. ; Temkin, H.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Summary form only given. In this work we report on the effect of carrier overflow on the threshold current and slope efficiency of 1.3-/spl mu/m compressively strained InGaAsP MQW lasers. Carrier leakage was enhanced through band structure changes induced by hydrostatic pressure. Hydrostatic pressure increases the direct band-gap energy in semiconductor materials, at rates that are dependent on the elastic properties of the materials.
Keywords :
III-V semiconductors; band structure; conduction bands; gallium arsenide; gallium compounds; hydrostatics; indium compounds; infrared sources; laser transitions; optical transmitters; quantum well lasers; 1.3 mum; InGaAsP; InGaAsP MQW lasers; InGaAsP lasers; band structure changes; carrier leakage; carrier overflow; compressively strained; direct band-gap energy; elastic properties; hydrostatic pressure; output characteristics; semiconductor materials; slope efficiency; threshold current; Laser feedback; Laser modes; Laser stability; Laser transitions; Optical control; Output feedback; Power generation; Power lasers; Quantum well lasers; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
