Contribution of a single strained layer InGaAs quantum well to the anisotropic group velocity dispersion of GRINSCH waveguides: Experiment and model results

Summary form only given. The group velocity dispersion (GVD) of semiconductor waveguides is an important property that influences the performance of both active and passive devices. Models for calculating the GVD of waveguides involve solving Maxwell´s equations using the waveguide composition together with the composition- and wavelength-dependent dielectric functions as input parameters. These models also yield the wavelength dependence of the guide´s effective index of refraction; a useful parameter in the design of grating based waveguide devices, such as DFB or DBR lasers. We have measured the GVD of GaAs-AlGaAs GRINSCH waveguide structures containing single, strained InGaAs quantum wells at their centres.