Title :
Characteristics of asymmetric quantum well heterostructure lasers and amplifiers
Author :
Afonenko, A.A. ; Kononenko, V.K. ; Manak, I.S.
Author_Institution :
Stepanov Inst. of Phys, Acad. of Sci., Minsk, Byelorussia
Abstract :
Summary form only given. Theoretical consideration by rate equations has shown that regimes of regular pulse generation at two or three remote optical wavelengths in the range of 790 to 850 nm can be realized in the GaAs-AlGaAs systems with bi- or triple quantum well heterostructure at suitable configuration and doping of active and barrier layers. Light pulse duration reaches values about 50 to 100 ps. Transformation of gain bands for TE and TM modes is dependent on the excitation current has been studied and calculations have been performed for the five quantum well GaAs-AlGaAs system.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; infrared sources; laser modes; laser theory; laser transitions; quantum well lasers; semiconductor device models; 50 to 100 ps; 790 to 850 nm; GaAs-AlGaAs; GaAs-AlGaAs QW lasers; GaAs-AlGaAs systems; TE modes; TM modes; active layers; asymmetric quantum well heterostructure lasers; barrier layers; bi-quantum well heterostructure; doping; excitation current; five quantum well; gain bands; light pulse duration; rate equations; regular pulse generation; remote optical wavelengths; semiconductor laser amplifiers; triple quantum well heterostructure; Doping; Equations; Laser theory; Optical amplifiers; Optical pulse generation; Pulse amplifiers; Pulse generation; Quantum mechanics; Quantum well lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
