Title :
Theoretical calculation of gain for interdiffused GaAs/AlGaAs quantum well lasers
Author :
Gomez-Alcala, Rafael ; Fraile-Pelaez, Francisco ; Esquivias, Ignacio
Author_Institution :
ETSI Telecomunicacion, Vigo Univ., Spain
Abstract :
Summary form only given. In this work we investigate for the first time to our knowledge, the influence of impurity-free interdiffusion on the modal gain of GaAs-Al/sub 0.2/Ga/sub 0.8/As SCH SQW lasers, including valence band mixing. Energy levels for the conduction and valence bands were calculated with the finite element method. The modal gain was calculated using the model of Aversa and Iizuka.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; laser theory; quantum well lasers; GaAs-Al/sub 0.2/Ga/sub 0.8/As; SCH SQW laser; finite element method; interdiffusion; modal gain; quantum well laser; valence band mixing; Charge carrier density; Electrons; Energy states; Gallium arsenide; Laser theory; Quantum mechanics; Quantum well lasers; Surface emitting lasers; Telecommunications; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
