Title :
An investigation of monolithic colliding-pulse mode-locked semiconductor lasers
Author :
McDougall, S.D. ; MartinsFilho, J.F. ; Ironside, C.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Summary form only given. We report on the operation of monolithic colliding-pulse (CPM) semiconductor lasers. Our lasers are passively mode-locked lasers consisting of a strip-loaded waveguide structure fabricated on four quantum well GaAs/AlGaAs semiconductor material nominally emitting at a wavelength of 870 nm. CPM action is achieved in these lasers by reverse biasing of an electrically isolated section in the center of the laser cavity that forms a saturable absorber.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; quantum well lasers; waveguide lasers; 870 nm; GaAs-AlGaAs; monolithic colliding-pulse mode-locked semiconductor laser; quantum well; saturable absorber; strip-loaded waveguide; Laser mode locking; Optical harmonic generation; Optical pulses; Optical waveguides; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Ultrafast optics; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
