High-reflectivity semiconductor mirrors for 1.3-/spl mu/m surface-emitting lasers

Summary form only given. Fabrication of Bragg mirrors is a key point in the realization of vertical-cavity surface-emitting lasers (VCSELs). At short wavelengths (0.8-0.98 /spl mu/m) the index step in the AlAs/GaAs system is about 0.6 and very high reflectivities can be reached with only 20 periods. At 1.3 or 1.5 /spl mu/m, the index step is lower and dielectric mirrors are commonly used but the device fabrication is more complex due to the necessity of substrate etching. In this paper, we demonstrate the growth of a 40-period GaInAsP/InP Au-plated mirror with 99.6% reflectivity and we propose a new experimental setup allowing an accuracy better than 0.05% for the reflectivity measurement.