DocumentCode :
355134
Title :
Effect of facet roughness on etched-facet semiconductor laser diodes
Author :
Francis, D.A. ; Chang-Hasnain, Connie J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fYear :
1996
fDate :
2-7 June 1996
Firstpage :
423
Lastpage :
424
Abstract :
Summary form only given. In this paper, we investigate the effect of roughness on the reflectivity of laser facets. Given that mask pixel size is one of the possible sources of roughness and that high-resolution e-beam mask fabrication is costly, it is important to find the mask resolution required so that the fabricated laser performance is not significantly affected. To assess the importance of the roughness on the performance of our modeled devices, we calculate the light versus current (LI) characteristics, the coupling to higher order modes and the far-field patterns of etched-facet laser diodes with varying roughness.
Keywords :
etching; optical fabrication; reflectivity; semiconductor lasers; etched-facet semiconductor laser diode; fabrication; facet roughness; far-field pattern; light current characteristics; mask pixel size; mode coupling; reflectivity; Diode lasers; Electrons; Etching; Laser modes; Mirrors; Optical materials; Reflectivity; Ring lasers; Semiconductor diodes; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-443-2
Type :
conf
Filename :
864871
Link To Document :
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