Experimental determination of high-speed GaAs digital circuit interconnect parameters

Author

Kiziloglu, K. ; Dagli, N. ; Matthaei, G.L. ; Long, S.I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

639

Abstract

Coplanar strips that are representative of on-chip high-speed digital circuit interconnects have been fabricated on GaAs and characterized up to 18 GHz. Strip widths of 4, 6, and 8 mu m with strip spacings of 4 and 8 mu m and conductor thicknesses of 2500 AA and 5000 AA were used in the experiments. Line parameters such as resistance, capacitance, inductance per unit length, and propagation constant were extracted from these measurements. Measurement results confirm the quasi-TEM (transverse electromagnetic) properties of such interconnects.<>

Keywords

III-V semiconductors; digital circuits; guided electromagnetic wave propagation; strip lines; 18 GHz; 2500 AA; 4 to 8 micron; 5000 AA; GaAs; capacitance; coplanar strips; digital circuit interconnect parameters; inductance; line parameters; on-chip high-speed digital circuit interconnects; propagation constant; quasi-TEM; resistance; strip spacings; strip widths; Capacitance measurement; Conductors; Digital circuits; Electrical resistance measurement; Electromagnetic measurements; Gallium arsenide; Inductance measurement; Integrated circuit interconnections; Propagation constant; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147084

Filename

147084