Ku-band super low-noise pseudomorphic heterojunction field-effect transistors (HJFET) with high producibility and high reliability

Author

Tokue, T. ; Nashimoto, Y. ; Hirokawa, T. ; Mese, A. ; Ichikawa, S. ; Negishi, H. ; Toda, T. ; Kimura, T. ; Fujita, M. ; Nagasako, I. ; Itoh, Takayuki

Author_Institution

NEC Corp., Kawasaki, Japan

fYear

1991

fDate

10-14 July 1991

Firstpage

705

Abstract

The authors report newly developed Ku-band super-low-noise pseudomorphic heterojunction FETs (HJFETs) with high producibility and high reliability, utilizing a novel electron beam lithography technique. The developed HJFETs with 0.25 mu m long and 200 mu m wide gate FETs showed an average noise figure of 0.6 dB with 11.3 dB average associated gain at 12 GHz and exhibited highly reliable operation with a mean time to failure of 3*10/sup 9/ hours at 100 degrees C.<>

Keywords

electron beam lithography; electron device noise; high electron mobility transistors; reliability; solid-state microwave devices; 0.25 micron; 0.6 dB; 11.3 dB; 12 GHz; 200 micron; HEMT; Ku-band; electron beam lithography; field-effect transistors; high reliability; low noise device; pseudomorphic heterojunction FETs; super low-noise; FETs; Fabrication; Gain; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Lithography; Microwave devices; Noise figure; Semiconductor device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147101

Filename

147101