A high power, high efficiency millimeter-wave pseudomorphic HEMT

Author

Smith, P.M. ; Ferguson, D.W. ; Kopp, W.F. ; Chao, P.C. ; Hu, W. ; Ho, P. ; Ballingall, J.M.

Author_Institution

Gen. Elect. Co., Syracuse, NY, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

717

Abstract

A pseudomorphic HEMT (high electron mobility transistor) with record output power and high efficiency at 44 GHz has been developed. The 0.15 mu m gate-length, 900 mu m gate-width device generates 500 to 700 mW of output power with power-added efficiencies ranging from 22 to 30%. Moreover, the devices are producible: DC yields for these large gate-width HEMTs are 50-80% and uniformity of electrical characteristics is excellent. Reliability aspects of the device are discussed and the results of high-temperature DC life testing of pseudomorphic power HEMTs are reported.<>

Keywords

S-parameters; high electron mobility transistors; life testing; reliability; semiconductor device testing; solid-state microwave devices; 0.15 micron; 22 to 30 percent; 44 GHz; 500 to 700 mW; 900 micron; DC yields; EHF; electrical characteristics; high efficiency; high electron mobility transistor; high power; high-temperature DC life testing; millimeter-wave; power-added efficiencies; pseudomorphic HEMT; Chaos; HEMTs; Inductance; Laboratories; MODFETs; Millimeter wave transistors; PHEMTs; Power generation; Thermal resistance; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147104

Filename

147104