High power and high efficiency AlInAs/GaInAs on InP HEMTs

Author

Matloubian, M. ; Nguyen, L.D. ; Brown, A.S. ; Larson, L.E. ; Melendes, M.A. ; Thompson, M.A.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

721

Abstract

The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40% respectively, were achieved at 12 GHz. When biased for maximum efficiency, a PAE of 59% and an output power of 470 mW/mm with 11.3 dB gain were obtained. These results demonstrate the viability of these HEMTs for power amplification. Considering that these HEMTs have an f/sub max/ of over 200 GHz, they should also have good power performance at millimeter-wave frequencies.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 11.3 dB; 12 GHz; 200 GHz; 40 to 59 percent; AlInAs-GaInAs-InP; EHF; SHF; high efficiency; high electron mobility transistors; millimeter-wave frequencies; power HEMTs; power performance; power-added efficiencies; Current measurement; Electrons; HEMTs; Indium phosphide; MODFETs; Power generation; Power measurement; Substrates; Thermal conductivity; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147105

Filename

147105