Title :
High power and high efficiency AlInAs/GaInAs on InP HEMTs
Author :
Matloubian, M. ; Nguyen, L.D. ; Brown, A.S. ; Larson, L.E. ; Melendes, M.A. ; Thompson, M.A.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40% respectively, were achieved at 12 GHz. When biased for maximum efficiency, a PAE of 59% and an output power of 470 mW/mm with 11.3 dB gain were obtained. These results demonstrate the viability of these HEMTs for power amplification. Considering that these HEMTs have an f/sub max/ of over 200 GHz, they should also have good power performance at millimeter-wave frequencies.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 11.3 dB; 12 GHz; 200 GHz; 40 to 59 percent; AlInAs-GaInAs-InP; EHF; SHF; high efficiency; high electron mobility transistors; millimeter-wave frequencies; power HEMTs; power performance; power-added efficiencies; Current measurement; Electrons; HEMTs; Indium phosphide; MODFETs; Power generation; Power measurement; Substrates; Thermal conductivity; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147105
