Title :
A highly linear MESFET
Author :
Chu, S.L.G. ; Huang, J. ; Struble, W. ; Jackson, G. ; Pan, N. ; Schindler, M.J. ; Tajima, Y.
Author_Institution :
Raytheon Co., Lexington, MA, USA
Abstract :
A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz. The difference between these two numbers, 24 dB, is the largest yet reported for a MESFET. This device also dissipates only 400 mW of DC power yielding a linearity figure-of-merit (IP3/P/sub DC/) of 50.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; solid-state microwave devices; 10 GHz; 400 mW; 400 micron; DC power; GaAs; MESFET; SHF; active channel; highly linear; spike profile; Circuit noise; Distortion measurement; Doping; Electronic warfare; Energy consumption; Gallium arsenide; Linearity; MESFETs; Power measurement; Springs;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147106
