Title :
Ku-band power amplifier using pseudomorphic HEMT devices for improved efficiency
Author :
Helms, D. ; Komiak, J.K. ; Kopp, W.F. ; Ho, P. ; Smith, P.M. ; Smith, R.P. ; Hogue, D.
Author_Institution :
GE Electron. Lab., Syracuse, NY, USA
Abstract :
A two-stage Ku-band power amplifier demonstrating state-of-the-art power gain and efficiency has been developed using 0.25 mu m gate-length, 1600 mu m gate-width double-heterojunction pseudomorphic HEMT (high electron mobility transistor) devices. At 12 GHz, output powers of 2.2 and 2.7 watts have been achieved, with power-added efficiencies of 39% and 36% respectively. An associated gain of 14 dB has been demonstrated.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 0.25 micron; 12 GHz; 14 dB; 1600 micron; 2.2 W; 2.7 W; 36 percent; 39 percent; Al/sub 0.24/Ga/sub 0.76/As-In/sub 0.22/Ga/sub 0.78/As-GaAs; double-heterojunction pseudomorphic HEMT; gate-length; gate-width; output powers; power gain; power-added efficiencies; two-stage Ku-band power amplifier; Doping; Electron mobility; Frequency; HEMTs; MESFETs; PHEMTs; Phased arrays; Power amplifiers; Power generation; Resists;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147132
