Title :
30-V MMIC power amplifier with novel bias circuitry
Author :
Peterson, K.E. ; Hung, H.-L.A. ; Phelleps, F.R. ; Chang, E.Y. ; Singer, J.L. ; Carlson, H.E. ; Cornfield, A.B.
Author_Institution :
CMOSAT Lab., Clarksburg, MD, USA
Abstract :
High-voltage power amplifiers allow more efficient DC power conditioning and distribution than is possible with low-voltage systems. Results are presented for the first fully monolithic high-voltage FET amplifier, with on-chip power combining and novel bias circuitry. Output power greater than 2 W was obtained with 30-V drain bias at 11 GHz. A power-added efficiency of 34% was also achieved, which is believed to be the best reported for such amplifiers. The bias circuitry developed here allows the high-voltage amplifier to be biased for class AB operation. This will lead to improved DC-to RF conversion efficiency in satellite transponders by allowing the elimination of an electronic power converter or its replacement by a simple voltage regulator.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 11 GHz; 2 W; 30 V; 34 percent; DC power conditioning; DC-to RF conversion efficiency; MMIC power amplifier; bias circuitry; class AB operation; drain bias; monolithic high-voltage FET amplifier; on-chip power combining; output power; power-added efficiency; satellite transponders; Circuits; Distributed amplifiers; FETs; High power amplifiers; MMICs; Operational amplifiers; Power amplifiers; Power conditioning; Power generation; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147133
