Title :
Monolithic 38 GHz dielectric resonator oscillator
Author_Institution :
British Telecom Res. Lab., Ipswich, UK
Abstract :
A 38 GHz monolithic DRO (dielectric resonator oscillator) incorporating a 0.3 micron HEMT (high electron mobility transistor) has been designed using a small-signal design procedure. Ten DROs have been tested, seven of which were found to be fully working at RF and gave output powers up to 0 dBm. The temperature coefficient of the frequency of oscillation was -2.1 ppm/ degrees C and the phase noise was -68 dBc/Hz at 100 kHz from carrier. The DRO is potentially inexpensive when produced in high volume and is suitable for a local oscillator in a broadband telecommunications system.<>
Keywords :
MMIC; dielectric resonators; field effect integrated circuits; microwave oscillators; 0.3 micron; 38 GHz; HEMT; broadband telecommunications system; dielectric resonator oscillator; local oscillator; monolithic DRO; output powers; phase noise; small-signal design; temperature coefficient of frequency of oscillation; Circuits; Costs; Dielectrics; Frequency; Gallium arsenide; HEMTs; Oscillators; Phase noise; Reflection; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147135
