Title :
Low noise microwave oscillator using ultra high Q dielectric resonator
Author :
Uzawa, K. ; Matsumoto, K.
Author_Institution :
Sumitomo Metal Min. Co. Ltd., Chiba, Japan
Abstract :
A dielectric resonator oscillator (DRO) with excellent low single sideband (SSB) noise was developed at 16 GHz. BMT (Ba(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/) ceramic with low dielectric loss (tan delta = 3.3*10/sup -5/ at 10 GHz) was used as the dielectric resonator. A conventional GaAs MESFET was used as an active component. SSB noise at 10 kHz from the carrier of -102 dBc/Hz was obtained. This result implies that the low-loss BMT ceramic as a high-Q dielectric resonator contributes to the low-noise performance of the oscillators.<>
Keywords :
dielectric resonators; microwave oscillators; noise; solid-state microwave circuits; 16 GHz; BaMgO/sub 3/TaO/sub 3/ ceramic; GaAs; MESFET; dielectric resonator oscillator; low single sideband noise; low-loss BMT ceramic; low-noise performance; microwave oscillator; ultra high Q dielectric resonator; Amplitude modulation; Ceramics; Dielectric losses; Dielectric substrates; Dielectric thin films; Frequency; Gallium arsenide; MESFETs; Microwave oscillators; Stability;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147136
