Title :
Novel high performance SPDT power switches using multi-gate FET´s
Author :
McGrath, F. ; Varmazis, C. ; Kermarrec, C. ; Pratt, R.
Author_Institution :
Lowell Oper., MA, USA
Abstract :
The development of a 16-watt single-pole double throw (SPDT) MESFET based switch is presented. The switch is unique in its use of a multi-gate FET device which can be fabricated on a standard production switch process. The power handling is nine times that of a single FET while occupying only 30% more die area. The device´s bandwidth is comparable to that of a single FET while insertion loss is minimized using a novel N-plus (N+) intergate layer. A switch using the multi-gate device has achieved 0.4 dB insertion loss and 40 dB of isolation at L-band.<>
Keywords :
Schottky gate field effect transistors; power electronics; semiconductor switches; solid-state microwave devices; 0.4 dB; 1 to 5 GHz; 16 W; L-band; N/sup +/ intergate layer; SPDT power switches; bandwidth; die area; insertion loss; multi-gate FET device; power handling; single pole double throw MESFET switch; Bandwidth; FETs; Gallium arsenide; Insertion loss; MESFETs; Optical attenuators; Parasitic capacitance; Power semiconductor switches; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147137
