A millimeter wave passive FET mixer with low 1/f noise

Author

Geddes, J. ; Bauhahn, P. ; Swirhun, S.

Author_Institution

Honeywell Syst. & Res. Center, Bloomington, MN, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1045

Abstract

A millimeter-wave resistive (intermediate frequency) FET mixer design that provides down-conversion to low IF (intermediate frequency) frequencies with low 1/f noise is described. The single FET unbalanced mixer has a double sideband noise figure of 7.5 dB with a conversion loss of 9 dB at an LO (local oscillators) drive level of 9 dBm. An RF to LO isolation of 15 dB is achieved through the use of a resonant loop from drain to gate. The design allows downconversion to low IF frequencies using a FET-compatible process with a small chip size. A comparison of MESFET and HEMT (high electron mobility transistor) versions of the mixer shows that the 1/f noise level is higher in the HEMT mixer.<>

Keywords

MMIC; Schottky gate field effect transistors; electron device noise; field effect integrated circuits; mixers (circuits); 1/f noise; 7.5 dB; 9 dB; MESFET; MMIC; conversion loss; double sideband noise figure; millimeter wave; passive FET mixer; resonant loop; single FET unbalanced mixer; FETs; HEMTs; Local oscillators; MESFETs; MODFETs; Millimeter wave transistors; Mixers; Noise figure; Radio frequency; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147192

Filename

147192