An improved point-contact transistor structure

Recently an improved structure for the hermetically sealed version of the point contact transistor has been developed. Units employing this structure have met satisfactorily military shock, vibration, and centrifuge tests and have characteristics which enable them to undergo severe temperature cycling without significant changes in important device parameters. The "electrical" reliability of these devices as indicated by power and shelf aging tests which have extended to 6000 hours duration is excellent. The features of structure which result in this improved performance of the device are explored. In addition, simple modifications of the basic mechanical design which permit dissipation of approximately one half watt of power without external heat sinks are discussed.