DocumentCode
3551571
Title
The design, construction, and high-frequency performance of developmental drift transistors
Author
Ditrick, N.H. ; Kestenbaum, A.L.
Volume
2
fYear
1956
fDate
1956
Firstpage
12
Lastpage
12
Abstract
This paper describes a method of fabricating drift-transistor structures by combining solid-phase diffusion with alloy-junction techniques. Design considerations pertaining to devices made in this manner are presented. The electrical characteristics of developmental drift transistors are related to their physical structure and data are given describing their performance as high-frequency amplifiers.
Keywords
Electric variables; Germanium; Laboratories; Life estimation; Oscillators; Power generation; Telephony; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1956 International
Type
conf
DOI
10.1109/IEDM.1956.186970
Filename
1472116
Link To Document