Title :
Characteristics and structure of a diffused-base germanium oscillator transistor
Author :
Warner, R.M. ; Loman, G.T. ; Early, J.M.
Abstract :
A diffused-base germanium transistor has been developed to serve as a VHF oscillator. It is required to deliver more than 40 milliwatts at 200 mcps with an input power of 200 milliwatts. Cumulative distribution curves are given for the parameters and performance of a group of 112 units which meet these requirements, as well as for the universe of transistors from which they came. The median output power for the group is approximately 88 milliwatts, for an oscillator efficiency of 44 percent. Mechanical structure is also described; this structure enabled these transistors to pass a 20,000-g acceleration test.
Keywords :
Germanium; Laboratories; Life estimation; Oscillators; Power generation; Telephony; Testing;
Conference_Titel :
Electron Devices Meeting, 1956 International
DOI :
10.1109/IEDM.1956.186971