Diffused base surface-barrier transistors

The transistor described here has been operated at 60 percent efficiency at 100 mc with sufficient input to provide 100 milliwatts of r-f power. A more useful and conservative operating point produces 40 milliwatts at 100 mc. These same transistors will typically give 18-db gain at 25 mc with 6-mc bandwith. Typical electrical characteristics are: Fmax-- 350 mc, rb1Cc= 90, a = 0.95, Vdc= 30V, and Vde= 4V.