Abstract :
Silicon p-n-p transistors have been made in which the base region was produced by diffusing a donor from the vapor phase and the emitter region by shallow alloying of aluminum. The processes of evaporation of gold-antimony and aluminum contact materials and their alloying are described. Design considerations for a transistor with alpha cutoff of 40 mc/sec will be discussed including collector transition capacitance, collector series body resistance, minority carrier lifetime and mobility in the base, and emitter injection efficiency. The performance of a number of laboratory units will be presented showing a range in alpha from .80 to .99, collector capacitance of 30 µµfd, and maximum alpha cutoff frequency of 50 mc/sec.
