Design of high voltage conductivity modulated silicon rectifiers

Silicon N+ IP+ diffused junction rectifiers have been made by the diffusion of boron and phosphorus into high resistivity material. Units have been fabricated with breakdown voltage over 2000 volts. The forward current is proportional to exp. (qv/nkt) with 1.2 -n-2 for currents up to 200 amps/cm². The breakdown Voltage of N+ IP+ structure has been calculated from the avalanche theory of McKay and Wolff and is shown to be a function of the width of the I region. The reverse currents are in the order of 10^-6amps/cm²at low bias and increase as the square root of the applied voltage. These relatively large reverse currents can be attributed to Shockley-Read generation in the space charge region.