Performance and applications of novel tunable oscillators utilizing focused-ion-beam-implanted Gunn-effect devices

The RF performance of novel tunable voltage-controlled injection-locked and dielectric resonator oscillators utilizing focused-ion-beam-implanted (FIBI) Gunn-effect devices is reported. For injection-locked oscillators utilizing this device, the injection bandwidths were 1.8 GHz at 13 GHz and 50 MHz at 6.5 GHz. The voltage-controlled oscillators (VCOs) using a single-gradient device demonstrated output powers of -13+or-2 dBm over the tuning range from 6.5 to 13.5 GHz, and for devices with two linearly graded doping concentrations the tuning range was between 5 and 25 GHz. The authors demonstrate a family of dielectric resonator oscillators based on a single VCO design that operate in the frequency range from 8.26 to 13.85 GHz, for which the phase noise was -80 dBc/Hz at 100 kHz from the 9 GHz carrier. By varying the bias voltage across the device a frequency tuning range from 5 to 25 GHz was achieved.<>