Temperature stable, low-phase noise 2 GHz dielectric resonator oscillator

The results of a rigorous analysis of a state-of-the-art 2 GHz dielectric resonator oscillator (DRO) are presented. The performance of the DRO was determined by measuring the phase noise, loaded quality factor, and frequency-versus-temperature response of the oscillator. These test results represent the lowest reported phase noise for a 2 GHz DRO, with the oscillator exhibiting single sideband phase levels of -100 dBc/Hz and -126 dBc/Hz at carrier offset frequencies of 100 Hz and 1 kHz, respectively. A superb frequency-versus-temperature response is shown. The DRO exhibits a frequency stability of 1.31 p.p.m./K over the temperature range +55 degrees C to -45 degrees C.<>