DocumentCode :
3551679
Title :
Some new structure-type targets for the vidicon - Analysis of their operation
Author :
Ochs, S.A. ; Weimer, P.K.
Author_Institution :
RCA, Princeton, N. J.
fYear :
1957
fDate :
Oct. 31 1957-Nov. 1 1957
Firstpage :
114
Lastpage :
115
Abstract :
Severe physical requirements are imposed on the photoconductive layer used in the conventional vidicon camera tube target. In particular, its resistivity must be of the order of 1012ohm-cm for frame storage operation and its thickness must be sufficient to prevent capacitive lag. New vidicon targets of a complex structure permit a relaxation of these requirements on the photoconductor. Two types of targets are discussed. 1) An experimental "lateral-flow" structure in which the photocurrent flows parallel to the target plane instead of transversely as in the standard vidicon. 2) An experimental "bridge-type" structure in which each picture element provides an internal closed circuit so that the charge pattern is established independently of the scanning beam.
Keywords :
Doping; Electric variables; Electrons; Etching; Fabrication; Lapping; Packaging; Semiconductor devices; Semiconductor diodes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1957 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1957.187060
Filename :
1472331
Link To Document :
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