Accurate design centering and yield prediction using the ´truth model´ (FET model and MMIC design)

Author

Meehan, M.D. ; Wandinger, T. ; Fisher, D.A.

fYear

1991

fDate

10-14 July 1991

Firstpage

1201

Abstract

The truth model is introduced as the first implementation of a statistically validated GaAs FET simulation model. The authors examine the power and accuracy of the truth model by comparing the predicted and measured statistical response of a GaAs monolithic microwave integrated circuit (MMIC) 0.5-2.5 GHz amplifier. By design centering a small-signal amplifier both with and without the use of the truth model, it is shown that both yield estimates and the design center are affected by the accuracy of the device statistical model.<>

Keywords

III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; field effect transistors; gallium arsenide; microwave amplifiers; semiconductor device models; solid-state microwave devices; statistical analysis; 0.5 to 2.5 GHz; FET simulation model; GaAs; MMIC; design centering; device statistical model; monolithic microwave integrated circuit; small-signal amplifier; truth model; yield estimates; yield prediction; Circuit simulation; Gallium arsenide; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit yield; MMICs; Microwave FETs; Microwave measurements; Power measurement; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147235

Filename

147235