Title :
Accurate design centering and yield prediction using the ´truth model´ (FET model and MMIC design)
Author :
Meehan, M.D. ; Wandinger, T. ; Fisher, D.A.
Abstract :
The truth model is introduced as the first implementation of a statistically validated GaAs FET simulation model. The authors examine the power and accuracy of the truth model by comparing the predicted and measured statistical response of a GaAs monolithic microwave integrated circuit (MMIC) 0.5-2.5 GHz amplifier. By design centering a small-signal amplifier both with and without the use of the truth model, it is shown that both yield estimates and the design center are affected by the accuracy of the device statistical model.<>
Keywords :
III-V semiconductors; MMIC; circuit CAD; field effect integrated circuits; field effect transistors; gallium arsenide; microwave amplifiers; semiconductor device models; solid-state microwave devices; statistical analysis; 0.5 to 2.5 GHz; FET simulation model; GaAs; MMIC; design centering; device statistical model; monolithic microwave integrated circuit; small-signal amplifier; truth model; yield estimates; yield prediction; Circuit simulation; Gallium arsenide; Integrated circuit measurements; Integrated circuit modeling; Integrated circuit yield; MMICs; Microwave FETs; Microwave measurements; Power measurement; Predictive models;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147235
