• DocumentCode
    3551701
  • Title

    Ultra high-speed switching transistor

  • Author

    Thornton, C. ; McCotter, J. ; Angell, J.

  • Volume
    3
  • fYear
    1957
  • fDate
    1957
  • Firstpage
    117
  • Lastpage
    117
  • Abstract
    A graded base vhf transistor has now been developed specifically for computer applications and will shortly be placed in production. This transistor typically has a use time of nine light feet, a storage time of five light feet, and a fall time less than six light feet at a circuit gain of 10. At these speeds the unit is readily driven into saturation with saturation voltages the order of a tenth of a volt. This performance is necessarily obtained only in a structure wherein be customary intrinsic region has been eliminated. Several processing refinements required to bring about this geometry at high yield have been achieved and will be described together with a discussion of control of the important switching parameters.
  • Keywords
    Circuit testing; Hafnium; Impurities; Performance gain; Production; Silicon; Switches; Temperature; VHF circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1957 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1957.187080
  • Filename
    1472351