DocumentCode :
3551701
Title :
Ultra high-speed switching transistor
Author :
Thornton, C. ; McCotter, J. ; Angell, J.
Volume :
3
fYear :
1957
fDate :
1957
Firstpage :
117
Lastpage :
117
Abstract :
A graded base vhf transistor has now been developed specifically for computer applications and will shortly be placed in production. This transistor typically has a use time of nine light feet, a storage time of five light feet, and a fall time less than six light feet at a circuit gain of 10. At these speeds the unit is readily driven into saturation with saturation voltages the order of a tenth of a volt. This performance is necessarily obtained only in a structure wherein be customary intrinsic region has been eliminated. Several processing refinements required to bring about this geometry at high yield have been achieved and will be described together with a discussion of control of the important switching parameters.
Keywords :
Circuit testing; Hafnium; Impurities; Performance gain; Production; Silicon; Switches; Temperature; VHF circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1957 International
Type :
conf
DOI :
10.1109/IEDM.1957.187080
Filename :
1472351
Link To Document :
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