• DocumentCode
    3551709
  • Title

    Statistical techniques for objective characterization of microwave device statistical data

  • Author

    Meehan, M.D. ; Campbell, L.

  • fYear
    1991
  • fDate
    10-14 July 1991
  • Firstpage
    1209
  • Abstract
    A comprehensive treatment of statistical metrics for the characterization of microwave device statistical data is presented. The primary aim is to investigate the power of these tests in their ability to faithfully distinguish between like and unlike joint probability density functions. It is shown that the adequate techniques are available to solve this problem, and a novel application of these techniques is illustrated by distinguishing the statistical difference between two GaAs FET databases with identical means standard deviations, kurtosis, skewness, and correlations. The authors verify the proposed characterization approach by design centering a small-signal amplifier, both with and without the use of statistically characterized device data.<>
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; probability; semiconductor device models; solid-state microwave devices; statistical analysis; FET databases; GaAs; design centering; joint probability density functions; microwave device; objective characterization; small-signal amplifier; statistical data; statistical metrics; Circuit synthesis; Circuit testing; FETs; Gallium arsenide; Microwave devices; Microwave theory and techniques; NASA; Statistical distributions; Statistics; Tree graphs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1991., IEEE MTT-S International
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-87942-591-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.1991.147237
  • Filename
    147237